Zinc tin oxide 투명박막트랜지스터의 특성에미치는 열처리 효과
Thermal treatments effects on the properties of zinc tin oxide transparent thin film transistors
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초록
Zn와 Sn의 원자비가 2:1인 타겟을 고주파 스파터링하여 ZnO-SnO2(ZTO)박막을 증착하고 열처리에 따른 구조적 특성변화를 조사하였다. 이 ZTO박막을 활성층으로 사용하여 투명박막트랜지스터(TTFT)를 제조하였다. 약 100 nm 두께의 SiO2위에100 nm의 Si3N4막을 기른 후 TTFT의 게이트 절연막으로 채택하였다. TTFT의 전달 특성을 통해 이동도, 문턱전압, 작동전류-차단전류 비(Ion/Ioff), 계면트랩밀도를 구하였다. 기판 가열 및 후속 열처리가 ZTO TTFT의 특성 변화에 미치는 영향을분석하였다.
Abstract
ZnO-SnO2(ZTO) was deposited by RF magnetron sputtering using a ceramic target whose Zn atomic ratio to Sn is 2:1as a target, and the crystal structure variation with thermal treats was investigated. Transparent thin film transistors(TTFT) were fabricated using the ZTO films as active layers. About 100 nm-thick Si3N4 film grown on 100 nm-thickSiO2 film was adopted as gate dielectrics. The mobility, threshold voltage, Ion/Ioff, and interface trap density were obtainedfrom the transfer characteristics of ZTO TTFTs. The effects of substrate temperature, and post-annealing on theproperty variation of ZTO TTFT were analyzed.
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