UV/O3 조사 시간에 따른 Sol-gel 공정 기반 CuO 박막 트랜지스터의 전기적 특성 변화
UV/O3 Process Time Effect on Electrical Characteristics of Sol-gel Processed CuO Thin Film Transistor
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Sol-gel 공법을 이용하여, p-형 CuO 박막 트랜지스터를 제작하였다. 제작된 CuO 박막 트랜지스터는 copper (II) acetate monohydrate를 전구체로 사용하였다. 500 ℃열처리 후에 형성된 전구체는 p-형 CuO 박막이 됨을 확인하였다. 또한 전구체를 형성하기 전 기판표면의 UV/O3 조사량에 따른 CuO 박막 트랜지스터의 전기적 특성변화에 대하여 연구하였으며, 600 초동안 UV/O3를 조사한 경우 제작된 CuO 박막 트랜지스터는 5 × 10-3 cm2/V·s 의 이동도와 약 102의 온/오프 전류비를 보여주었다.
Abstract
In this research, sol-gel processed CuO p-type thin film transistors were fabricated with copper (II) acetate monohydrate precursors. After 500 ℃annealing process, the deposited thin films were fully converted into CuO. We investigated UV/O3 process time effect on electrical characteristics of sol-gel processed CuO thin film transistors. After 600 sec UV/O3 process, the fabricated CuO thin film transistor delivered field effect mobility in saturation regime of 5 × 10-3 cm2/V·s and on/off current ratio of ~102.
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