마그네트론 RIE을 이용한 M/NEMS용 다결정 3C-SiC 식각 연구
A study on polycrystalline 3C-SiC etching with magnetron applied reactive ion etching for M/NEMSapplications
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Abstract
The magnetron reactive ion etching (RIE) characteristics of polycrystalline (poly) 3C-SiC grown on SiO2/Si substrateby APCVD were investigated. Poly 3C-SiC was etched by CHF3wall protective layers, with additive O2 and Ar gases. Especially, it was performed in magnetron RIE, which can etchSiC at a lower ion energy than a comercial RIE system. Stable etching was achieved at 70 W and the poly 3C-SiCwas undamaged. The etch rate could be controled from 20 /min to 400 /min by the manipulation of gas flow rates,chamber pressure, RF power, and electrode gap. The best vertical structure was improved by the addition of 40 % O2and 16 % Ar with the CHF3 reactive gas. Therefore, poly 3C-SiC etched by magnetron RIE can expect to be applied toM/NEMS applications.
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