글루코오스 농도 측정을 위한 볼로미터 타입의 적외선 센서 제작
The fabrication of bolometric IR detector for glucose concentration detection
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초록
A vanadium pentoxide (V2O5)-based bolometric infrared (IR) sensor has been designed and fabricated using micro electro mechanical systems (MEMS) technology for glucose detection and its resistive characteristics has been illustrated. The proposed bolometric infrared sensor is composed of the vanadium pentoxide array that shows superior temperature coefficient of resistance (TCR) and standard silicon micromachining compatibility. In order to achieve the best performance, deposited V2O5 thin film is optimized by adequate rapid thermal annealing (RTA) process. Annealed vanadium oxide thin film has demonstrated a linear characteristic and relatively high TCR value (−4 %/oC). The resistance of vanadium oxide is changed by IR intensity based on glucose concentration.
Abstract
A vanadium pentoxide (V2O5)-based bolometric infrared (IR) sensor has been designed and fabricated using micro electro mechanical systems (MEMS) technology for glucose detection and its resistive characteristics has been illustrated. The proposed bolometric infrared sensor is composed of the vanadium pentoxide array that shows superior temperature coefficient of resistance (TCR) and standard silicon micromachining compatibility. In order to achieve the best performance, deposited V2O5 thin film is optimized by adequate rapid thermal annealing (RTA) process. Annealed vanadium oxide thin film has demonstrated a linear characteristic and relatively high TCR value (−4 %/oC). The resistance of vanadium oxide is changed by IR intensity based on glucose concentration.
참고문헌 (6)
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- Y-H Han, "Fabrication of vanadium oxide thin film with high-temperature coefficient of resistance using V₂O5", V, Thin Solid Films, pp.2003, 425(1-2)[DOI]
- M.H. Yoon, "Electrical characteristics of V₂O5 thin films formed on p-Si by sputter- deposition and rapid thermal annealing", Applied Surface Science, 244(1-4), pp.444~448 (2005)