Influence of Rapid Thermal Annealing on the Opto-Electrical Performance of Ti-doped Indium Oxide Thin Films
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Titanium (Ti) doped indium oxide (In2O3) films were deposited on glass substrates by RF magnetron sputtering and the films were rapid thermal annealed at 100, 200, and 300°C, respectively to investigate the influence of the rapid annealing on the opto-electrical performance of the films. The grain size of In2O3 (222) plane increased with annealing temperatures and their electrical resistivity decreased to as low as 8.86×10-4 Ω cm at 300°C. The visible transmittance also improved from 77.1 to 79.5% when the annealing temperature increased. The optical band gap of the TIO films shifted from 4.010 to 4.087 eV with increases in annealing temperature from room temperature to 300℃. The figure of merit shows that the TIO films annealed at 300℃ had better optical and electrical performance than the other films prepared using lower-temperature or no annealing.
Abstract
Titanium (Ti) doped indium oxide (In2O3) films were deposited on glass substrates by RF magnetron sputtering and the films were rapid thermal annealed at 100, 200, and 300°C, respectively to investigate the influence of the rapid annealing on the opto-electrical performance of the films. The grain size of In2O3 (222) plane increased with annealing temperatures and their electrical resistivity decreased to as low as 8.86×10-4 Ω cm at 300°C. The visible transmittance also improved from 77.1 to 79.5% when the annealing temperature increased. The optical band gap of the TIO films shifted from 4.010 to 4.087 eV with increases in annealing temperature from room temperature to 300℃. The figure of merit shows that the TIO films annealed at 300℃ had better optical and electrical performance than the other films prepared using lower-temperature or no annealing.
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