Electrical and optical properties of Ga-doped SnO_2 thin films via pulsed laser deposition
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Ga_2O_3 -doped SnO_2 thin films were grown by using pulsed laser deposition (PLD) technique on glass substrate. The optical and electrical properties of these films were investigated for different doping concentrations, oxygen partial pressures, substrate temperatures, and film thickness. The films were deposited at different substrate temperatures (room temperature to 600℃). The best opto-electrical properties is shown by the film deposited at substrate temperature of 300℃ with oxygen partial pressure of 80 m Torr and the gallium concentration of 2 wt%. The as obtained lowest resistivity is 9.57×10^(-3) Ω cm with the average transmission of 80% in the visible region and an optical band gap (indirect allowed) of 4.26 eV.
Abstract
Ga_2O_3 -doped SnO_2 thin films were grown by using pulsed laser deposition (PLD) technique on glass substrate. The optical and electrical properties of these films were investigated for different doping concentrations, oxygen partial pressures, substrate temperatures, and film thickness. The films were deposited at different substrate temperatures (room temperature to 600℃). The best opto-electrical properties is shown by the film deposited at substrate temperature of 300℃ with oxygen partial pressure of 80 m Torr and the gallium concentration of 2 wt%. The as obtained lowest resistivity is 9.57×10^(-3) Ω cm with the average transmission of 80% in the visible region and an optical band gap (indirect allowed) of 4.26 eV.
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