질화갈륨 기반 전자소자의 고에너지 양성자 조사 영향평가를 위한 전산모사 모델링 연구
Simulation Modeling for Evaluating High-energy Proton Irradiation Effects of Gallium Nitride-based Electronics
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초록
Gallium Nitride (GaN)-based electronics have been studied as high-frequencyelectronics for space applications because of a two-dimensional electron gas (2DEG) with highcarrier density and mobility as well as a strong resistance for radiation. The understanding ofthe space radiation effects on electronics is important to employ GaN-based devices as spaceelectronics because the space radiation, including protons, electrons, and heavy ions, degeneratecurrent characteristics of GaN electronics. In this work, we studied simulation modeling for theproton irradiation effect in GaN devices by using technology computer aided design (TCAD)simulator. Point defects, including Ga and N vacancies created by the radiation damage, wereapplied in the barrier, channel, and buffer regions to consider the displacement damage. Parameters for contact resistance and schottky tunneling were also optimized to reflect the protonirradiation damage. The simulation results for drain current characteristics before and after theproton irradiation were evaluated by comparing with experiment results. The simulation resultsshowed a similar tendency to the experimental results and reflected the phenomenon in GaNdevice after the proton irradiation well. The modeling results can contribute to predict spaceradiation effects in GaN electronics.
Abstract
Gallium Nitride (GaN)-based electronics have been studied as high-frequencyelectronics for space applications because of a two-dimensional electron gas (2DEG) with highcarrier density and mobility as well as a strong resistance for radiation. The understanding ofthe space radiation effects on electronics is important to employ GaN-based devices as spaceelectronics because the space radiation, including protons, electrons, and heavy ions, degeneratecurrent characteristics of GaN electronics. In this work, we studied simulation modeling for theproton irradiation effect in GaN devices by using technology computer aided design (TCAD)simulator. Point defects, including Ga and N vacancies created by the radiation damage, wereapplied in the barrier, channel, and buffer regions to consider the displacement damage. Parameters for contact resistance and schottky tunneling were also optimized to reflect the protonirradiation damage. The simulation results for drain current characteristics before and after theproton irradiation were evaluated by comparing with experiment results. The simulation resultsshowed a similar tendency to the experimental results and reflected the phenomenon in GaNdevice after the proton irradiation well. The modeling results can contribute to predict spaceradiation effects in GaN electronics.
참고문헌 (19)
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