Experimental and numerical investigation about single-event burnout in power normally-off AlGaN/GaN HEMT
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This article mainly introduces an AlGaN/GaN HEMT device with better single event burnout (SEB) performance against SEB. By adjusting the field plate and buffer layer, better single event irradiation hardening can be achieved. The main purpose of this design is to achieve the reinforcement of anti-single event burnout by adjusting the peak electric field and carrier concentration at the channel, based on the SEB mechanism previously studied in previous work. TCAD simulation verifies that the reinforced structure can significantly improve the above problems. Experimental research has demonstrated that the experimental threshold voltage of SEB can be as high as 390V under the vertical irradiation of heavy ions with a LET of 75.4 Mev/(mg/cm2) for the reinforced structure. providing higher performance data for GaN-based power devices. In addition, this article also discusses the contribution of each reinforcement part to SEB reinforcement.
Abstract
This article mainly introduces an AlGaN/GaN HEMT device with better single event burnout (SEB) performance against SEB. By adjusting the field plate and buffer layer, better single event irradiation hardening can be achieved. The main purpose of this design is to achieve the reinforcement of anti-single event burnout by adjusting the peak electric field and carrier concentration at the channel, based on the SEB mechanism previously studied in previous work. TCAD simulation verifies that the reinforced structure can significantly improve the above problems. Experimental research has demonstrated that the experimental threshold voltage of SEB can be as high as 390V under the vertical irradiation of heavy ions with a LET of 75.4 Mev/(mg/cm2) for the reinforced structure. providing higher performance data for GaN-based power devices. In addition, this article also discusses the contribution of each reinforcement part to SEB reinforcement.