5 MeV 및 25 MeV 양성자 조사에서 TMAH 공정을적용한 GaN MIS-HEMT의 전기적 특성 변화
Changes in the Electrical Characteristics of GaN MIS-HEMT with TMAH Process Under 5 MeV and 25 MeV Proton Irradiation
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초록
본 연구에서는 GaN MIS-HEMT 소자의 방사선 신뢰성을 평가하기 위해 5 MeV 및 25 MeV 양성자 조사를 수행하고, TMAH표면처리 공정이 소자의 전기적 특성에 미치는 영향을 분석하였다. TMAH 공정은 표면의 네이티브 산화물을 제거하고 표면 거칠기를 평탄화하여 소자의 성능과 신뢰성을 높이는 역할을 한다. TMAH 공정를 적용한 소자의 경우, 양성자 조사 후 on current와Ron, 문턱 전압 변화율을 증가시켜 소자의 성능 저하를 심화시키는 것으로 나타났다. 특히, 5 MeV 조사에서는 TMAH 공정이 소자의 특성에 미치는 영향이 더 두드러졌으며, 25 MeV 조사에서도 유사한 경향이 확인되었다. 결론적으로, TMAH 공정은 양성자 조사 에너지와 관계없이 소자의 전기적 특성 변화에 기여할 수 있으므로, 방사선 환경에서 소자의 신뢰성을 보장하기 위해 공정 조건을 신중히 평가하고 최적화할 필요가 있다.
Abstract
In this study, the radiation reliability of GaN MIS-HEMT devices was evaluated by performing 5 MeV and 25 MeVproton irradiation and analyzing the effects of TMAH surface treatment on the electrical characteristics of thedevices. The TMAH process removes native oxides from the surface and smooths surface roughness, contributingto improved device performance and reliability. The results showed that the TMAH process exacerbated thedegradation of device performance by increasing the changes in on current, Ron, and threshold voltage afterproton irradiation. Notably, the impact of the TMAH process was more pronounced under 5 MeV irradiation, whilea similar trend was also observed for 25 MeV irradiation. In conclusion, the TMAH process contributed to thechanges in electrical characteristics regardless of proton irradiation energy. Therefore, careful evaluation andoptimization of the process conditions are necessary to ensure the reliability of devices in radiation environments. This study provides essential data for improving the radiation reliability of GaN MIS-HEMT.
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