Characterization of AlGaN/GaN HEMT irradiated at 5 keV and 25 MeV proton energies
1
조회
0
다운로드
0
인용
0
참고문헌
키워드
초록
AlGaN/GaN high electron mobility transistors(HEMT) were irradiated at 5 keV and 25 MeV proton energies. Current-voltages were compared before and after proton irradiation. As expected from simulation results, 5 keV protons severely damaged the transistors’ performance compared to 25 MeV protons. Also, the effects of both low and higher fluencies were compared. Source-Drain currents were dramatically decreased under a higher fluency. Due to the extremely thin 2-Dimensional Electron Gas and the high displacement threshold energy, AlGaN/GaN HEMTs have great potential for applications in earth orbit.
Abstract
AlGaN/GaN high electron mobility transistors(HEMT) were irradiated at 5 keV and 25 MeV proton energies. Current-voltages were compared before and after proton irradiation. As expected from simulation results, 5 keV protons severely damaged the transistors’ performance compared to 25 MeV protons. Also, the effects of both low and higher fluencies were compared. Source-Drain currents were dramatically decreased under a higher fluency. Due to the extremely thin 2-Dimensional Electron Gas and the high displacement threshold energy, AlGaN/GaN HEMTs have great potential for applications in earth orbit.
참고문헌 (13)
- S. Keller, , IEEE Transactions on Electron Devices, 48(12), pp.2573~2578 (2000)
- Z. Z. Bandic, , Solid-State Electronics, 42(12), pp.2289~2294 (1998)
- M. Razeghi, "Optoelectronic Devices:IIInitrides" (2004), Elsevier
- A. Ionascut-Nedelcescu, , IEEE Transactions on Nuclear Science, 49, pp.2733~2738 (2002)
- M. S. Shur, "GaN-based Materials and Devices: Growth, Fabrication, Characterization and Performance" (2004), World Scientific Publishing Co
- S. J. Pearton, , JOURNAL OF PHYSICS-CONDENSED MATTER, 16(29), pp.R961~R994 (2004)
- C. Claeys, "Radiation Effects in Advanced Semiconductor Materials and Devices" (2002), Springer-Verlag
- M. Higashiwaki, , Physica Status Solidi A, 204(6), pp.2042~2048 (2007)
- X. L. Wang, , Solid-State Electronics, 51(3), pp.428~432 (2007)
- X. Hu, , IEEE Trans.Nucl. Sci, 50(6), pp.1791~1796 (2003)
- B. Luo, , Appl. Phys. Lett, 80, pp.604~606 (2002)
- X. Hu, , IEEE Trans. Nuclear Science, 51(2), pp.293~297 (2004)
- [URL]