n형 Bi-Te와 p형 Sb-Te 증착박막으로 구성된 in-plane 열전센서의 형성공정 및 감지특성
Fabrication Process and Sensing Characteristics of the In-plane Thermoelectric Sensor Consisting of the Evaporated p-type Sb-Te and n-type Bi-Te Thin Films
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초록
유리기판에 n형 Bi-Te 열전박막과 p형 Sb-Te 열전박막을 진공증착하여 in-plane 열전센서를 형성한 후, 열전센서의 감지특성을 분석하였다. 열전센서를 구성하는데 사용한 n형 Bi-Te 증착박막은 -165 μV/K의 Seebeck 계수와80×10-4 W/K2-m의 출력인자를 나타내었으며, p형 Sb-Te 증착박막은 142 μV/K의 Seebeck 계수와 51.7×10-4 W/K2-m의출력인자를 나타내었다. 이와 같은 n형 Bi-Te 및 p형 Sb-Te 박막 15쌍으로 구성된 열전센서는 2.8 mV/K의 감지도를 나타내었다.
Abstract
An in-plane thermoelectric sensor was processed on a glass substrate by evaporation of the n-type Bi-Te and p-type Sb-Te thin films, and its sensing characteristics were evaluated. The n-type Bi-Te thins film used to fabricate the inplane sensor exhibited a Seebeck coefficient of -165 μV/K and a power factor of 80×10-4 W/K2-m. The p-type Sb-Te thin film used to fabricate the in-plane sensor exhibited a Seebeck coefficient of 142 μV/K and a power factor of 51.7×10-4 W/K2-m. The in-plane thermoelectric sensor consisting of 15 pairs of the n-type Bi-Te and the p-type Sb-Te evaporated thin films exhibited a sensitivity of 2.8 mV/K.
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