환원분위기 열처리가 (Bi,Sb)2Te3 증착박막의 열전특성에 미치는 영향
Effects of Annealing in a Reduction Ambient on Thermoelectric Properties of the (Bi,Sb)2Te3 Thin Films Processed by Vacuum Evaporation
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환원분위기 열처리가 진공증착법으로 형성한 (Bi,Sb)2Te3 박막의 열전특성에 미치는 영향을 연구하였다. 환원분위기(50% H2 + 50% Ar)에서 300oC의 온도로 2시간 유지하여 열처리함으로써 (Bi,Sb)2Te3 박막의 결정성이 크게 향상되었으며 결정립 크기가 크게 증가하였다. 환원분위기 열처리에 의한 정공농도의 감소에 기인하여 (Bi,Sb)2Te3 박막의 Seebeck 계수가 열처리 전의 ~90 μV/K로부터 ~180 μV/K 으로 증가하였다. 환원분위기 열처리에 의해 (Bi,Sb)2Te3 박막의 출력인자(power factor)가 5배에서 16배 정도 향상되었으며, 환원분위기 열처리 후 (Bi,Sb)2Te3 박막은 18.6×10-4 W/K2-m의 최대 출력인자를 나타내었다.
Abstract
Effects of annealing process in a reduction ambient on thermoelectric properties of the (Bi,Sb)2Te3 thin films prepared by thermal evaporation have been investigated. With annealing at 300oC for 2 hrs in a reduction ambient(50% H2 + 50% Ar), the crystallinity of the (Bi,Sb)2Te3 thin films were substantially improved with remarkable increase in the grain size. Seebeck coefficients of the (Bi,Sb)2Te3 thin films increased from ~90 μV/K to ~180 μV/K with annealing in the reduction ambient due to decrease in the hole concentration. Power factors of the (Bi,Sb)2Te3 thin films were remarkably improved for 5~16 times with annealing in the reduction atmosphere. After annealing in the reduction ambient, a (Bi,Sb)2Te3 evaporated film exhibited a maximum power factor of 18.6×10-4 W/K2-m.
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