증착공정 및 환원분위기 열처리가 Sb-Te 박막의 열전특성에 미치는 영향
Effects of Evaporation Processes and a Reduction Annealing on Thermoelectric Properties of the Sb-Te Thin Films
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증착공정 및 환원분위기 열처리가 p형 Sb-Te 박막의 열전특성에 미치는 영향을 연구하였다. Sb2Te3 잉곳을 분쇄한 분말을 증착원으로 사용하여 형성한 박막은 2.71×10-4 W/m-K2, Sb와 Te 혼합분말을 증착원으로 사용하여 형성한박막은 0.12×10-4 W/m-K2, Sb와 Te의 동시증착으로 제조한 박막은 0.73×10-4 W/m-K2의 출력인자를 나타내었다. 300oC 에서 2시간 유지하는 환원분위기 열처리에 의해 Sb2Te3 잉곳을 분쇄한 분말을 증착원으로 사용하여 형성한 박막의 출력인자가 24.1×10-4 W/m-K2로 향상되었으며, Sb와 Te의 동시증착으로 제조한 박막의 출력인자는 40.2×10-4 W/m-K2로 크게 향상되었다.
Abstract
Effects of evaporation processes and a reduction annealing on thermoelectric properties of the Sb-Te thin films prepared by thermal evaporation have been investigated. The thin film evaporated by using the powders formed by crushing a Sb2Te3 ingot as an evaporation source exhibited a power factor of 2.71×10-4 W/m-K2. The thin film processed by evaporation of the mixed powders of Sb and Te as an evaporation source showed a power factor of 0.12×10-4 W/m-K2. The thin film fabricated by coevaporation of Sb and Te dual evaporation sources possessed a power factor of 0.73×10-4 W/m-K2. With a reduction annealing at 300oC for 2 hrs, the power factors of the films evaporated by using the Sb2Te3 ingot-crushed powders and coevaporated with Sb and Te dual evaporation sources were remarkably improved to 24.1×10-4 W/m-K2 and 40.2×10-4 W/m-K2, respectively.
참고문헌 (29)
- K. Rajasekar, "Thermal sensors based on Sb2Te3 and (Sb2Te3)70(Bi2Te3)30 thin films", Ionics, 14, pp.69~ (2007)
- K. Tittes, "Electrochemical deposition of Bi2Te3 for thermoelectric microdevices", J. Solid State Electrochem., 7, pp.714~ (2003)
- L. M. Goncalves, "Thermoelectric microstructures of Bi2Te3", Sb2Te3 for a self-calibrated micro-pyrometer, 2006, pp.A130, 346~
- D. D. L. Wijingaards, "Design and fabrication of on-chip integrated poly SiGe and poly Si Peltier devices", Sensors and Actuators, 85, pp.316~ (2000)
- A. W. Van Herwaarden, "The Seebeck effect in silicon ICs", Sensors and Actuators, 6, pp.245~ (1984)
- J. R. Lim, "Thermoelectric microdevice fabrication process and evaluation at the Jet Propulsion Laboratory (JPL)", Proc. 21th International Conference on Thermoelectrics, pp.535~ (2002), International Thermoelectric Society
- Y. Zhang, "On-chip high speed localized cooling using superlattice microrefrigerators", IEEE Trans. Comp. Packag. Technol., 29, pp.395~ (2006)
- 여용희, "ZrO2를 나노개재물로 첨가한 p형 (Bi,Sb)2Te3 나노벌크 가압소결체의 열전특성", 마이크로전자 및 패키징학회지, 17(3), pp.51~57 (2010), 한국마이크로전자및패키징학회
- 박동현, "n형 Bi2(Te,Se)3 가압소결체의 열전특성", 마이크로전자 및 패키징학회지, 17(2), pp.49~54 (2010), 한국마이크로전자및패키징학회
- A. Giani, "Electrical and thermoelectrical properties of Sb2Te3 prepared by the metalorganic chemical vapor deposition technique", J. Mater. Sci. Lett., 18, pp.541~ (1999)
- 김민영, "환원분위기 열처리가 (Bi,Sb)2Te3 증착박막의 열전특성에 미치는 영향", 마이크로전자 및 패키징학회지, 15(3), pp.1~8 (2008), 한국마이크로전자및패키징학회
- Y. Kim, "Structural and thermoelectric transport properties of Sb2Te3 thin films grown by molecular beam epitaxy", J. Appl. Phys., 91, pp.715~ (2002)
- L. W. Da Silva, "Thermoelectric performance of films in the bismuth-tellurium and antimonytellurium systems", J. Appl. Physics, 97, pp.114903~ (2005)
- D. D. Frari, "Comparative study of the electrochemical preparation of Bi2Te3, Sb2Te3, and (BixSb1-x)2Te3 films", Thin Solid Films, 483, pp.44~ (2005)
- M. Takahashi, "Electric and thermoelectric properties of electrodeposited bismuth telluride (Bi2Te3) films", J. Appl. Phys., 96, pp.5582~ (2004)
- N. G. Stoltz, "Effects of annealing electrodeposited bismuth telluride films", Proc. 21th International Conference on Thermoelectrics, Long Beach, pp.28~ (2002), International Thermoelectric Society
- "Periodic table of elements, element tellurium" (2010)[URL]
- "Periodic table of elements, element antimony" (2010)[URL]
- P. Loak, "Preparation and some physical properties of Sb2Te3xSex single crystals", J. Crystal Growth, 94(3), pp.656~ (1989)
- V. Damodara Das, "Thickness and temperature dependence of electrical properties of Bi2(Te0.1Se0.9)3 thin films", J. Appl. Phys., 86, pp.1518~ (1999)
- Y. Zhang, "Characteristics of Si-doped Sb2Te3 thin films for phase-change random access memory", Appl. Surf. Sci., 254, pp.5602~ (2008)
- V. Venkatasamy, "ALD approach toward electrodeposition of Sb2Te3 for phase-change memory applications", J. Electrochem. Soc., 155, pp.D693~ (2008)
- G. Leimkuhler, "Electrodeposition of antimony telluride", J. Electrochem. Soc., 149, pp.C474~ (2002)
- Q. Huang, "Electrodeposition of SbTe phase-change alloys", J. Electrochem, Soc., 155, pp.D104~ (2008)
- V. Damodara Das, "Electrical conductivity and thermoelectric power of amorphous Sb2Te3 thin films and amorphous-crystalline transition", J. Mater. Sci., 22, pp.1573~ (1987)
- S. K. Lyum, "Thermoelectric properties of the bismuth-antimony-telluride and the antimony-telluride films processed by electrodeposition for micro-device applications", Thin Solid Films, 517, pp.4199~ (2009)
- S.A. Baily, "Transport properties of amorphous antimony telluride", Phys. Review, B, 73, pp.165211~ (2006)
- M. Y. Kim, "Crystallization behavior and thermoelectric characteristics of the electrodeposited Sb2Te3 thin films", Thin Solid Films, 518, pp.6550~ (2010)
- J. S. Lee, "Thermoelectric properties of the hot-pressed (Bi0.2Sb0.8)2Te3 alloy with addition of BN and WO3 powders", J. Mater. Sci., 35, pp.881~ (2000)