Technology Computer-Aided Design과 결합된 SPICE를 통한 금속-강유전체-반도체 전계효과 트랜지스터의 전기적 특성 해석
Electrical analysis of Metal-Ferroelectric-Semiconductor Field-Effect Transistor with SPICE combined with Technology Computer-Aided Design
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초록
금속-강유전체-반도체 전계효과 트랜지스터 (MFS/MFISFET)의 동작 특성을 technology computer-aided design (TCAD)과 simulation program with integrated circuit emphasis (SPICE)를 결합하여 전산모사하는 방법을 제시하였다. 복잡한 강유전체의 동작 특성을 수치해석을 이용하여 해석한 다음, 이를 이용하여 금속-강유전체-반도체 구조에서 반도체 표면에 인가되는 표면 전위를 계산하였다. 계산된 TCAD 변수인 표면 전위를 전계효과 트랜지스터의 SPICE 모델에서 구한 표면 전위와 같다고 보고 게이트 전압에 따른 전류-전압 특성을 구할 수 있었다. 이와 같은 방법은 향후 MFS/MFISFET를 이용한 메모리소자의 집적회로 설계에 매우 유용하게 적용될 수 있을 것이다.
Abstract
A simulation method combined with the simulation program with integrated circuit emphasis (SPICE) and the technology computer-aided design (TCAD) has been proposed to estimate the electrical characteristics of the metal-ferroelectric-semiconductor field effect transistor (MFS/MFISFET). The complex behavior of the ferroelectric property was analyzed and surface potential of the channel region in the MFS gate structure was calculated with the numerical TCAD method. Since the calculated surface potential is equivalent with the surface potential obtained with the SPICE model of the conventional MOSFET, we can obtain the current-voltage characteristics of MFS/MFISFET corresponding to the applied gate bias. Therefore, the proposed method will be very useful for the design of the integrated circuits with MFS/MFISFET memory cell devices.
참고문헌 (13)
- "A 0.25ß 3.0 V 1T1C Nonvolatile Ferroelectric RAM with Address Transistion Detector Scheme", 162 (2002), and Current forcing Latch Sense Amplifier
- "Memory window of Pt", SrBi2Ta2O9, SiO2, pp.Si structure for metal ferroelectric insulator semiconductor field effect transistor[DOI]
- "Memory operation of Pt-SrBi2Ta2O9-Y2O3-Si field-effect transistor with damage-free selective dry etching process", 49, pp.497~ (2005)
- "Physics of the ferroelectric nonvolatile memory field effect transistor", 72(12), pp.5999~ (1992)
- "Device Modeling of Ferroelectric Memory Field-Effect Transistor" (2002)
- "Two-Dimensional Simulation of Ferroelectric Memory cells", 48(2) (2001)
- "Nuamerical Analysis of MetalFerroelectric-semiconductor FieldEffect-Transistors" (1998)
- "A Novel Simulation Program with Integrated Circuit Emphasis Model of Ferroelectric Capacitors Using Schmitt Trigger Circuit", 40(4B) (2001)
- "Parallel-element Macromodel for Ferroelectric Capacitors" (2000)
- "A New circuit Simulation Model of Ferroelectric capacitors", 41(4), pp.2654~ (2002)
- "A BSIM3v3 and DFIM Based Ferroelectric Field Effect Transistor Model", e83-c(8), pp.1324~ (2000)
- "Operation of single transistor type ferroelectric random access memory", 40(22), pp.1397~ (2004)
- "Operation and Modeling of the MOS Transistor 심선일Technology Computer-Aided Design와 결합된 SPICE를 통한~ PAGE 5마이크로전자 및 패키징학회지 제12권 제1호 Journal of the Microelectronics & Packaging SocietyVol. 12", pp.59~632005, Mcgraw-hill