논문KCI 등재
Effect of Microstructure on Alternating Current-induced Damage in Cu Line
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Abstract
The effect of microstructure on alternating current-induced damage in 200 and 300 nm thick polycrystalline sputtered Cu lines on Si substrates has been investigated. Alternating currents were used to generate temperature cycles (with ranges from 100 to 300C) and thermal strains (with ranges from 0.14 to 0.42%) in the Cu lines at a frequency of 10 kHz. Fatigue loading caused the development of severe surface roughness that was localized within individual grains which depends severely on grain orientations.
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- "A New Dislocation Mechanism in Ultrathin Copper Films ybpark@andong.ac.krPAGE 6 Young-Bae ParkEffect of Microstructure on Alternating Current-induced Damage in Cu Lines PAGE 5마이크로전자 및 패키징학회지 제12권 제1호 Journal of the Microelectronics & Packaging SocietyVol. 12", pp.27~332005
관련 논문AI추천
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