MgO 증착을 위한 유도결합 플라즈마 마그네트론 스퍼터링에서 실시간 공정 진단
A Real-Time Diagnostic Study of MgO Thin Film Deposition Process by ICP Magnertron
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마그네슘 타겟을 이용한 산화마그네슘의 반응성 증착시에 나타나는 유도 결합 플라즈마의 영향을 실시간으로 QMS, OES, V/I 특성을 이용하여 분석하였다. 유도 결합 플라즈마가 켜지는 순간 QMS로 측정한 챔버 내의 가장 특징적인 불순물인 수분은 OES에서 OH (308.9 nm)로 나타났으며, 산소를 주입하면 급격히 감소하였다. PID로 조절되는 방전 전압을 금속 모드인 240V에서 산화물 모드인 150V까지 변화시켰을 때에 Ar I(420.1 nm)의 방출강도는 크게 변화하지 않았으며, Mg I(285.2 nm)는 비례하여 감소하였다. 스퍼터링이 거의 일어나지 않는 방전 전압 100V에서는 Mg I의 방출강도가 1/10로 감소하고 대신 O I(777.3 nm)가 10배 증가하였다. 이는 QMS를 사용한 측정 결과과 일치하였다.
Abstract
A real-time monitoring of ICP(inductively coupled plasma) assisted magnetron sputtering of MgO was carried out using a QMS(quadrupole mass spectrometer), an OES(optical emission spectrometer), and a digital oscilloscope with a high voltage probe and a current monitor. At the time of ICP ignition, the most distinct impurity was OH emission (308.9 nm) which was dissociated from water molecules. For reactive deposition, oxygen was added to Ar and the OH emission intensity was reduced abruptly. When the discharge voltage was regulated by a PID controller from 240V(metallic mode) to 120V(oxide mode), the emission intensity from Mg (285.2 nm) changed proportionally to the discharge voltage, but the intensity of Ar I(811.6 nm) was constant. At 100V of discharge voltage, Mg sputtering was almost stopped. Emissions from Ar I(420.1 nm) and Mg I were dropped down to 1/10, but Ar I(811.6 nm) didnt change. And the emission from atomic oxygen (O I, 777.3 nm) was increased to 10 times. These results are compatible with those from QMS study.
참고문헌 (2)
- "The identification of molecular spectra" (1976), 4th Ed. Chapman and Hall
- "Handbook of deposition technologies for films and coatings" (1994), NoYes pub