고밀도 플라즈마 화학 증착 장치를 이용한 TiB2 박막 제조

Abstract

The ICP-CVD (inductively coupled plasma chemical vapor deposition) process was applied to the deposition of TiB2 films. For plasma generation, 13.56MHz r.f. power was supplied to 2-turn Cu coil placed inside chamber. And the gas mixture of TiCl4, BCl3, H2 and Ar was used for TiB2 deposition.TiB2 films with high hardness(>40GPa) were obtained at extremely low deposition temperature(250℃), and the films hardness increased with ICP power and gas flow ratio of TiCl4/BCl3. The film structure was changed from (100) preferred orientation to random orientation with increasing RF power. It is supposed that the enhanced hardness of films was caused by a strong Ti-B chemical bonding of stoichiometric TiB2 films and film densification induced by high density plasma.