Properties of indium doped zinc oxide thin films deposited by RF magnetron sputtering
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Indium doped zinc oxide films (ZIO) were deposited on non-alkali glass substrates by radio frequency (RF) magnetron sputtering at room temperature. The structural, electrical and optical properties of the ZIO films were investigated as a function of their In2O3 content (3.33 – 15.22 wt%). The ZIO films deposited with an In2O3 content of 9.54 wt% showed a relatively low resistivity of 9.13 x 10-4 Ωcm and a highly c-axis preferred orientation. The grain size and FWHM were mainly affected by the In2O3 content. The crystallinity and resistivity were enhanced with increasing grain size. The average transmittance of the ZIO films was over 85% in the visible region and their band gap varied from 3.22 to 3.66 eV depending on their doping ratio.
Abstract
Indium doped zinc oxide films (ZIO) were deposited on non-alkali glass substrates by radio frequency (RF) magnetron sputtering at room temperature. The structural, electrical and optical properties of the ZIO films were investigated as a function of their In2O3 content (3.33 – 15.22 wt%). The ZIO films deposited with an In2O3 content of 9.54 wt% showed a relatively low resistivity of 9.13 x 10-4 Ωcm and a highly c-axis preferred orientation. The grain size and FWHM were mainly affected by the In2O3 content. The crystallinity and resistivity were enhanced with increasing grain size. The average transmittance of the ZIO films was over 85% in the visible region and their band gap varied from 3.22 to 3.66 eV depending on their doping ratio.
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