Effect of working pressure on the characteristics of Ga-Al doped ZnO thin films deposited by the facing targets sputtering method
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Ga-Al doped zinc oxide (GAZO) transparent conductive films were deposited on glass substrates by the facing targets sputtering (FTS) method. The GAZO thin film fabricated in argon atmosphere contained Ga and Al, as confirmed by energy dispersive x-ray spectroscopy (EDX). The effects of the working pressure on the structural, optical and electrical properties of the GAZO films were investigated. As the working pressure was increased, the electrical properties were decreased and the optical properties remained constant. As a result, the GAZO thin films deposited on the glass substrates showed 90% transmittance in the visible range (400-800 nm). And we obtained GAZO thin film with the lowest resistivity of 1.186 × 10-3Ω • cm.
Abstract
Ga-Al doped zinc oxide (GAZO) transparent conductive films were deposited on glass substrates by the facing targets sputtering (FTS) method. The GAZO thin film fabricated in argon atmosphere contained Ga and Al, as confirmed by energy dispersive x-ray spectroscopy (EDX). The effects of the working pressure on the structural, optical and electrical properties of the GAZO films were investigated. As the working pressure was increased, the electrical properties were decreased and the optical properties remained constant. As a result, the GAZO thin films deposited on the glass substrates showed 90% transmittance in the visible range (400-800 nm). And we obtained GAZO thin film with the lowest resistivity of 1.186 × 10-3Ω • cm.
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