DC 마그네트론 Co-sputtering 시스템을 이용하여 증착한 GAZO 박막의 전기적 및 구조적 특성
Electrical and Structural Properties of GAZO Films Deposited by DC Magnetron Co-sputtering System with Two Cathodes
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Ga/Al doped ZnO (GAZO) thin films were prepared on non-alkali glass substrate by co-sputtering system using two DC cathodes equipped with AZO (Al2O3:2.0 wt%) target and GZO (Ga2O3:6.65 wt%) target. This study examined the influence of Al/Ga concentration and substrate temperature on the electrical, structural and optical properties of GAZO films. The lowest resistivity 1.95×10−3 Ωcm was obtained at room temperature. With increasing substrate temperature, resistivity of GAZO film decreased to a minimum value of 7.47×10−4 Ωcm at below 300℃. Futhermore, when 0.05% H2 gas was introduced, resistivity of GAZO film decreased to 6.69×10−4Ωcm. All the films had a preferred orientation along the (002) direction, indicating that the deposited films have hexagonal wurtzite structure formed by the textured growth along the c-axis. The average transmittance of the films was more than 85% in the visible light range.
Abstract
Ga/Al doped ZnO (GAZO) thin films were prepared on non-alkali glass substrate by co-sputtering system using two DC cathodes equipped with AZO (Al2O3:2.0 wt%) target and GZO (Ga2O3:6.65 wt%) target. This study examined the influence of Al/Ga concentration and substrate temperature on the electrical, structural and optical properties of GAZO films. The lowest resistivity 1.95×10−3 Ωcm was obtained at room temperature. With increasing substrate temperature, resistivity of GAZO film decreased to a minimum value of 7.47×10−4 Ωcm at below 300℃. Futhermore, when 0.05% H2 gas was introduced, resistivity of GAZO film decreased to 6.69×10−4Ωcm. All the films had a preferred orientation along the (002) direction, indicating that the deposited films have hexagonal wurtzite structure formed by the textured growth along the c-axis. The average transmittance of the films was more than 85% in the visible light range.
참고문헌 (14)
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