DC마그네트론 스퍼터링에 의해 증착한 AZO박막의 특성
Characterization of Al-doped ZnO Films Deposited by DC Magnetron Sputtering
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Abstract
Aluminum doped zinc oxide (AZO) films were deposited on non-alkali glass substrate by DC magnetron sputtering with 3 types of AZO targets (doped with 1.0 wt%, 2.0 wt%, 3.0 wt% Al2O3). Electrical, optical properties and microstructure of AZO films have been investigated by Hall effect measurements, UV/VIS/ NIR spectrophotometer, and XRD, respectively. Crystallinity of AZO films increased with increasing substrate temperature (Ts) and doping ratio of Al. Resistivity and optical transmittance in visible light were 8.8×10−4 Ωcm and above 85%, respectively, for the AZO film deposited using AZO target (doped with 3.0 wt% Al2O3) at Ts of 300oC. On the other hand, transmittance of AZO films in near-infrared region decreased with increasing Ts and doping ratio of Al, which could be attributed to the increase of carrier density.
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