기판 온도에 따른 Cl2/BCl3/Ar 플라즈마에서 ZrO2 박막의 건식 식각
Temperature effect on dry etching of ZrO2 in Cl2/BCl3/Ar plasma
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초록
The wafer surface temperature is an important parameter in the etching process which influences the reaction probabilities of incident species, the vapor pressure of etch products, and the re-deposition of reaction products on feature surfaces. In this study, we investigated all of the effects of substrate temperature on the etch rate of ZrO2 thin film and selectivity of ZrO2 thin film over SiO2 thin film in inductively coupled plasma as functions of Cl2 addition in BCl3/Ar plasma, RF power and dc-bias voltage based on the substrate temperature in range of 10℃ to 80℃. The elements on the surface were analyzed by x-ray photoelectron spectroscopy (XPS).
Abstract
The wafer surface temperature is an important parameter in the etching process which influences the reaction probabilities of incident species, the vapor pressure of etch products, and the re-deposition of reaction products on feature surfaces. In this study, we investigated all of the effects of substrate temperature on the etch rate of ZrO2 thin film and selectivity of ZrO2 thin film over SiO2 thin film in inductively coupled plasma as functions of Cl2 addition in BCl3/Ar plasma, RF power and dc-bias voltage based on the substrate temperature in range of 10℃ to 80℃. The elements on the surface were analyzed by x-ray photoelectron spectroscopy (XPS).
참고문헌 (9)
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