BCl₃/Cl₂/Ar 플라즈마에서의 Na0.5K0.5NbO3 박막의 표면반응
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The etch of (Na0.5K0.5)NbO3 (NKN) thin film was performed in BCl₃/Cl₂/Ar inductively coupled plasma. It was found that the 1sccm addition BCl₃ (5%) into Cl₂2/Ar plasma caused a non-monotonic behavior of the NKN etch rate. The maximum etch rate of NKN was 95.3 nm/min at BCl₃ (1sccm)/Cl₂ (16 sccm)/Ar (4 sccm), 800 W ICP power, 1 Pa pressure and 400 W bias power. The NKN etch rate shows a monotonic behavior as the bias power increases. The analysis of the narrow scan spectra of XPS for both as-deposited and etched NKN films allowed one to assume ion assisted etch mechanism. The most probable reason for the maximum etch rate can be defined as a concurrence of chemical and physical etch pathways.
Abstract
The etch of (Na0.5K0.5)NbO3 (NKN) thin film was performed in BCl₃/Cl₂/Ar inductively coupled plasma. It was found that the 1sccm addition BCl₃ (5%) into Cl₂2/Ar plasma caused a non-monotonic behavior of the NKN etch rate. The maximum etch rate of NKN was 95.3 nm/min at BCl₃ (1sccm)/Cl₂ (16 sccm)/Ar (4 sccm), 800 W ICP power, 1 Pa pressure and 400 W bias power. The NKN etch rate shows a monotonic behavior as the bias power increases. The analysis of the narrow scan spectra of XPS for both as-deposited and etched NKN films allowed one to assume ion assisted etch mechanism. The most probable reason for the maximum etch rate can be defined as a concurrence of chemical and physical etch pathways.
참고문헌 (11)
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