P-type Electrical Characteristics of the Amorphous La2NiO4+δ Thin Films
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We report p-type electrical characteristics of the amorphous La2NiO4+δ thin films which were sputtered on the glass substrates using an RF sputtering system. As-deposited thin films at room temperature and 300oC were amorphous in nature. Post-annealing of the thin film samples over 400oC resulted in the nano-crystallization of the La2NiO4+δ. The electrical properties of the films were much dependent on the oxygen partial pressure, temperature of the post-annealing and sputtering ambient. The as-deposited samples at room temperature show a hole concentration of 7.82×1013 cm-3 , and it could be increased as high as 3.51×1022 cm-3 when the films were post-annealed in an oxygen atmosphere at 500oC. Such p-type conductivity behavior of the La2NiO4+δ films suggests that the amorphous and nano-crystallized La2NiO4+δ films have potential for the application as p-type semiconductive or conductive materials at low temperatures where material diffusion is limited.
Abstract
We report p-type electrical characteristics of the amorphous La2NiO4+δ thin films which were sputtered on the glass substrates using an RF sputtering system. As-deposited thin films at room temperature and 300oC were amorphous in nature. Post-annealing of the thin film samples over 400oC resulted in the nano-crystallization of the La2NiO4+δ. The electrical properties of the films were much dependent on the oxygen partial pressure, temperature of the post-annealing and sputtering ambient. The as-deposited samples at room temperature show a hole concentration of 7.82×1013 cm-3 , and it could be increased as high as 3.51×1022 cm-3 when the films were post-annealed in an oxygen atmosphere at 500oC. Such p-type conductivity behavior of the La2NiO4+δ films suggests that the amorphous and nano-crystallized La2NiO4+δ films have potential for the application as p-type semiconductive or conductive materials at low temperatures where material diffusion is limited.
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