PLD법에 의한 Mg가 첨가된 CuCrO2 박막 성장
Growth of Mg Doped CuCrO2 by Pulsed Laser Deposition
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We report on the growth of CuCrO2 films using pulsed laser deposition and their structural and electrical transport properties. CuCrO2 thin films were doped with 5 at% Mg for p-type properties. Epitaxial films of CuCr0.95Mg0.05O2 were grown on c-plane sapphire substrates. The effects of growth temperature and oxygen pressure on film properties were investigated. The main phase of delafossite CuCr0.95Mg0.05O2 was appeared above the growth temperature of 600oC. The thin film grown at 500oC showed the highest conductivity, reaching 19.6 S/cm while higher growth temperatures over 500oC led to lower conductivity; the thin film grown at 700oC showed 0.02 S/cm.
Abstract
We report on the growth of CuCrO2 films using pulsed laser deposition and their structural and electrical transport properties. CuCrO2 thin films were doped with 5 at% Mg for p-type properties. Epitaxial films of CuCr0.95Mg0.05O2 were grown on c-plane sapphire substrates. The effects of growth temperature and oxygen pressure on film properties were investigated. The main phase of delafossite CuCr0.95Mg0.05O2 was appeared above the growth temperature of 600oC. The thin film grown at 500oC showed the highest conductivity, reaching 19.6 S/cm while higher growth temperatures over 500oC led to lower conductivity; the thin film grown at 700oC showed 0.02 S/cm.
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