DC 마그네트론 스퍼터링을 이용한 IZO 박막의 제조와 특성 연구

Abstract

Indium zinc oxide (IZO) thin films were deposited on glass substrate by dc magnetron sputtering. The effects of oxygen flow rate and deposition temperature on electrical and optical properties of the films were investigated. With addition of small amount of oxygen gas, the characteristic properties of amorphous IZO films were improved and the specific resistivity was about 4.8×10-4 W · cm. Change of structural properties according to the deposition temperature was observed with XRD, SEM, and AFM. Films deposited above 300oC were found to be polycrystalline. Surface roughness of the films was increased due to the formation of grains on the surface. Electrical conductivity became deteriorated for polycrystalline IZO films. Consequently, high quality IZO films could be prepared by dc sputtering with O2/Ar 0.03 and deposition temperature in range of 150~200oC; a specific resistivity of 3.4×10-4 W · cm, an optical transmission over 90% at wavelength of 550 nm, and a rms value of surface roughness about 3Å.