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고주파 마그네트론 스퍼터링 방법으로 제작한 ITO 박막의 표면형태 및 전기적 특성

Surface morphology and electrical properties of ITO thin films fabricated by rf magnetron sputtering method

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주제분류공학일반

초록

Abstract

ITO (Indium Tin Oxide) thin films have been fabricated by rf magnetron sputtering with a target of a mixture In2O3 (90wt%) and SnO2 (10wt%). ITO films were sputtered with substrate temperature from 30 to 300oC and working pressure from 1 to under 0.1 m Torr. ITO thin films surface morphology and electrical properties analyzed by SEM Photographs, and X-ray diffractions patterns. The resistivity of ITO thin films was 1.810-5 /cm.

참고문헌 (13)

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