DC Magnetron Sputter로 제조된 Pt 박막의 특성
The characteristics of Pt thin films prepared by DC magnetron sputter
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Abstract
Thin films of platinum were deposited on a Al2O3/ONO(SiO2-Si3N4-SiO2)/Si-substrate with an 2-inch Pt(99.99 %) targetat room temperature for 20, 30 and 60 min by DC magnetron sputering, respectively X-ray difract meter (XRD) wasemployed for the investigation on crystal growth. The densification and the grain growth of the sputtered films have aconsiderable effect on sputtering time and annealing temperatures. The resistance of the Pt thin films was decreased withincreasing deposition time and sintering temperature. Pt micro heater thin film deposited for 60 min by DC magnetronsputtering on an Al2O3/ONO-Si substrate and annealed at 600oC for 1 h in air is found to be a most suitable micro heaterwith a generation capacity of 350oC temperature and 645 mW power at 5.0 V input voltage. Adherence of Pt thin filmand Al2O3 substrate was also found excelent. This characteristic is in good agreement with the uniform densification andand the results will be presented as soon as possible.
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