RF/DC 동시인가 마그네트론 스퍼터링 방법으로 증착된 ITO박막의 열처리 특성 연구
A Study on the Annealed Properties of ITO Thin Film Deposited by RF-superimposed DC Reactive Magnetron Sputtering
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Abstract
The ITO films were deposited on glass substrates by RF-superimposed dc reactive magnetron sputtering and were annealed in N2 vacuum furnace with temperatures in the range of 403K~573K for 30 minutes. Electrical, optical and structural properties of ITO films were examined with varying annealing temperatures from 403K to 573K. The resistivity of as-deposited ITO films was 5.410-4Wcm at the sputter conditions of applied RF/DC power of 200/200W, O2 flow of 0.2sccm and Ar flow of 0.2sccm. As a result of annealing in the temperature range of 403K~573K, the crystallization occurred at 423K that is lower than the crystallization temperature caused by a conventional sputtering method. And the resistivity decreased from 5.410-4Wcm to 2.310-4Wcm, the carrier concentration and mobility of ITO films increased from 4.91020/cm3 to 6.41020/ cm3, from 20.4cm2/Vsec to 41.0cm2/Vsec, respectively. The transmittance of ITO films in visible became higher than 90% when annealed in the temperature range of 423K~573K. High quality ITO thin films made by RF-superimposed dc reactive magnetron sputtering and annealing in N2 vacuum furnace will be applied to transparent conductive oxides of the advanced flat panel display.
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