Temperature Reliability Analysis based on SiC UMOSFET Structure
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초록
SiC-based devices perform well in high-voltage environments of more than 1200V compared to silicon devices, and areparticularly stable at very high temperatures. Therefore, 1700V UMOSFET has been actively researched and developedfor the use of electric power systems such as electric vehicles and aircrafts. In this paper, we analysed thermal variationsof critical variables (breakdown voltage ( ), on-resistance ( ), threshold voltage ( ), and transconductance ( ))for the three type 1700V UMOSFETs-Conventional UMOSFET (C-UMOSFET), Source Trench UMOSFET (STUMOSFET),and Local Floating Superjunction UMOSFET (LFS-UMOSFET). All three devices showed increase, increase, decrease, and decrease with increasing temperature. However, there are differences in , , , according to the structural differences of the three devices, and the degree and cause of the analysis were compared. Allresults were simulated using sentaurus TCAD.
Abstract
SiC-based devices perform well in high-voltage environments of more than 1200V compared to silicon devices, and areparticularly stable at very high temperatures. Therefore, 1700V UMOSFET has been actively researched and developedfor the use of electric power systems such as electric vehicles and aircrafts. In this paper, we analysed thermal variationsof critical variables (breakdown voltage ( ), on-resistance ( ), threshold voltage ( ), and transconductance ( ))for the three type 1700V UMOSFETs-Conventional UMOSFET (C-UMOSFET), Source Trench UMOSFET (STUMOSFET),and Local Floating Superjunction UMOSFET (LFS-UMOSFET). All three devices showed increase, increase, decrease, and decrease with increasing temperature. However, there are differences in , , , according to the structural differences of the three devices, and the degree and cause of the analysis were compared. Allresults were simulated using sentaurus TCAD.
참고문헌 (16)
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