Enhancement of energy efficiency of 3-phase inverter using LFS UMOSFET
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In this paper, the energy efficiency of a 4H-SiC UMOSFET with a local floating superjunction (LFS UMOSFET)was compared with a conventional P-shielding UMOSFET. For analysis, P-shielding UMOSFET and LFS UMOSFETwere modeled for energy loss and junction temperature. As a result, LFS UMOSFET showed switching lossreduction of 20.6%. In addition, it was confirmed that LFS UMOSFET is applied to a 3-phase inverter, resulting in33.2% lower power efficiency and 28.1% lower junction temperature than P-shielding UMOSFET. Electricalcharacteristics were simulated using Sentaurus TCAD, and the power circuit was simulated with the modelledUMOSFET using PSIM, a power circuit simulator.
Abstract
In this paper, the energy efficiency of a 4H-SiC UMOSFET with a local floating superjunction (LFS UMOSFET)was compared with a conventional P-shielding UMOSFET. For analysis, P-shielding UMOSFET and LFS UMOSFETwere modeled for energy loss and junction temperature. As a result, LFS UMOSFET showed switching lossreduction of 20.6%. In addition, it was confirmed that LFS UMOSFET is applied to a 3-phase inverter, resulting in33.2% lower power efficiency and 28.1% lower junction temperature than P-shielding UMOSFET. Electricalcharacteristics were simulated using Sentaurus TCAD, and the power circuit was simulated with the modelledUMOSFET using PSIM, a power circuit simulator.
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