Structure Modeling of 100 V Class Super-junction Trench MOSFET with Specific Low On-resistance
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For the conventional power metal-oxide semiconductor field-effect transistor (MOSFET) device structure, there exists a tradeoff relationship between specific on-resistance () and breakdown voltage (). In order to overcome the tradeoff relationship, a uniform super-junction (SJ) trench metal-oxide semiconductor field-effect transistor (TMOSFET) structure is studied and designed. The structure modeling considering doping concentrations is performed, and the distributions at breakdown voltages and the electric fields in a SJ TMOSFET are analyzed. The simulations are successfully optimized by the using of the SILVACO TCAD 2D device simulator, Atlas. In this paper, the specific on-resistance of the SJ TMOSFET is successfully obtained , which is of lesser value than the required one of at the class of 100 V and 100 A for BLDC motor.
Abstract
For the conventional power metal-oxide semiconductor field-effect transistor (MOSFET) device structure, there exists a tradeoff relationship between specific on-resistance () and breakdown voltage (). In order to overcome the tradeoff relationship, a uniform super-junction (SJ) trench metal-oxide semiconductor field-effect transistor (TMOSFET) structure is studied and designed. The structure modeling considering doping concentrations is performed, and the distributions at breakdown voltages and the electric fields in a SJ TMOSFET are analyzed. The simulations are successfully optimized by the using of the SILVACO TCAD 2D device simulator, Atlas. In this paper, the specific on-resistance of the SJ TMOSFET is successfully obtained , which is of lesser value than the required one of at the class of 100 V and 100 A for BLDC motor.
참고문헌 (7)
- J. Baliga, "Advanced Power MOSFET Concepts", pp.323~354
- Ying Wang, "Gate Enhanced Power UMOSFET With Ultralow On-Resistance", IEEE Electron Device Letters, 31(4) (2010)
- Gerald Deboy, "Super-junction devices & technologies-Benefits and Limitations of a revolutionary step in power electronics", EPE 2007 (2007)
- 노영환, "A Methodology of Dual Gate MOSFET Dosimeter with Compensated Temperature Sensitivity", 전기전자학회논문지, 15(2), pp.143~148 (2011), 한국전기전자학회
- Jongdae Kim, "A Novel Techinique for Fabricating High Reliable Trench DMOSFETs Using Self-Align Technique and Hydrogen Annealing", IEEE Transactions on Electron Devices, 50(2), pp.378~383 (2003)
- Yu Chen, "Design of Gradient Oxide Bypassed Super-junction Power MOSFET Devices", IEEE Transactions, 22(4) (2007)
- "SILVACO TCAD manual Atlas", ~