RF-DC magnetron co-sputtering법에 의한 p-ZnO 박막의 성장
Growth of p-ZnO by RF-DC magnetron co-sputtering
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초록
p형 ZnO 에피 박막을 사파이어 기판의 (0001)면 상에 RF-DC magnetron co-sputtering 법으로 성장시켰다. 약 120 nm 두께의 단결정상 박막을 성공적으로 얻어내었다. p형 ZnO를 만들기 위해서 Al 금속 타겟을 이용하여 DC 스퍼터링 으로 400oC와 600oC에서 ZnO를 rf magnetron sputtering으로 증착하고, 동시에 Al의 doping을 행하였으며, 성장된 박막의 결 정성과 광특성에 대하여 고찰하였다.
Abstract
p-ZnO films have been grown on (0001)sapphire substrates by RF-DC magnetron co-sputtering. The p-ZnO single crystalline thin films of the thickness about 120 nm were grown successfully. The dopant (Aluminum) was sputtered simultaneously from Al metal target by DC sputtering during rf-magnetron sputtering of ZnO at the substrate temperatures of 400oC and 600oC respectively. The crystallinity and optical properties of as-grown P-ZnO films have been characterized.
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