ZnO 에피 박막의 성장 거동과 광 특성
Growth behavior and optical property of ZnO epitaxial films
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초록
단결정상의 ZnO 에피 박막 성장을 사파이어 기판의 (0001)면 상에 RF magnetron sputtering 법으로 수행하였다. 200~600oC까지의 기판의 온도를 변화하여 가면서 ZnO 에피 박막의 성장 거동을 조사하였으며, 성장된 ZnO 박막에 대하여 산소분위기에서 400, 600, 800oC에서 각각 아닐링을 하여 이에 대한 광 특성을 평가하였다. Hall measurement에 의해 측정 된 carrier concentratin은 600oC에서 아닐링하여 2.6×1016 cm-3이었다.
Abstract
Growth of ZnO epitaxial films have been carried out on (0001) sapphire substrates by RF magnetron sputtering. The single crystalline ZnO films of the thickness about 400~500 mm were grown successfully. At the various substrate temperatures of 200~600oC, the growth behavior and optical properties of the epitaxial films have been characterized. As-grown ZnO films were annealed at the temperatures of 400, 600 and 800oC respectively in order to characterize the optical properties. The carrier concentration of ZnO films annealed at the temperature of 600oC was measured 2.6?016 cm-3 by Hall measurements.
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