Effect of annealing temperature on amorphous indium zinc oxide thin films prepared by a sol-gel spin-coating method
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Transparent conductive indium zinc oxide thin films were prepared by spin-coating a sol-gel solution. Zinc acetate dihydrate [Zn(CH3COO)2 · 2H2O] and indium acetate [In(CH3COO)3] were used as starting precursors, and 2-methoxyethanol with 1-propanol as solvents. Upon annealing in a temperature range from 500 to 1000oC, the thin film crystallizes into polycrystalline In2O3(ZnO). The lowest electrical resistivity was obtained at an annealing temperature of 700oC as 2 Ω · cm. Average optical transmittances were higher than 80% at all annealing temperatures. These experimental results confirm that the sol-gel spin-coating can be a good simplified practical method for forming transparent electrodes.
Abstract
Transparent conductive indium zinc oxide thin films were prepared by spin-coating a sol-gel solution. Zinc acetate dihydrate [Zn(CH3COO)2 · 2H2O] and indium acetate [In(CH3COO)3] were used as starting precursors, and 2-methoxyethanol with 1-propanol as solvents. Upon annealing in a temperature range from 500 to 1000oC, the thin film crystallizes into polycrystalline In2O3(ZnO). The lowest electrical resistivity was obtained at an annealing temperature of 700oC as 2 Ω · cm. Average optical transmittances were higher than 80% at all annealing temperatures. These experimental results confirm that the sol-gel spin-coating can be a good simplified practical method for forming transparent electrodes.
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