3차원 패키징용 TSV의 열응력에 대한 열적 전기적 특성
A study on Electrical Characteristic and Thermal Shock Property of TSV for 3-Dimensional Packaging
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Less power consumption, lower cost, smaller size and more functionality are the increasing demands forconsumer electronic devices. The three dimensional(3-D) TSV packaging technology is the potential solution to meet thisrequirement because it can supply short vertical interconnects and high input/output(I/O) counts. Cu(Copper) has usuallybeen chosen to fill the TSV because of its high conductivity, low cost and good compatibility with the multilayerinterconnects process. However, the CTE mismatch and Cu ion drift under thermal stress can raise reliability issues. Thisstudy discribe the thermal stress reliability trend for successful implementation of 3-D packaging.
Abstract
Less power consumption, lower cost, smaller size and more functionality are the increasing demands forconsumer electronic devices. The three dimensional(3-D) TSV packaging technology is the potential solution to meet thisrequirement because it can supply short vertical interconnects and high input/output(I/O) counts. Cu(Copper) has usuallybeen chosen to fill the TSV because of its high conductivity, low cost and good compatibility with the multilayerinterconnects process. However, the CTE mismatch and Cu ion drift under thermal stress can raise reliability issues. Thisstudy discribe the thermal stress reliability trend for successful implementation of 3-D packaging.
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