ZnO Power FET 모델링에 관한 연구
Study on Modeling of ZnO Power FET
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In this paper, we proposed ZnO trench Static Induction Transistor(SIT). Because The compound semiconductor had superior thermal characteristics, ZnO and SiC power devices is next generation power semiconductor devices. We carried out modeling of ZnO SIT with 2-D device and process simulator. As a result of modeling, we obtained 340V breakdown voltage. The channel thickness was 3um and the channel doping concentration is 1e17cm-3. And we carried out thermal characteristics, too.
Abstract
In this paper, we proposed ZnO trench Static Induction Transistor(SIT). Because The compound semiconductor had superior thermal characteristics, ZnO and SiC power devices is next generation power semiconductor devices. We carried out modeling of ZnO SIT with 2-D device and process simulator. As a result of modeling, we obtained 340V breakdown voltage. The channel thickness was 3um and the channel doping concentration is 1e17cm-3. And we carried out thermal characteristics, too.
참고문헌 (5)
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- T.Tamama, "Bipolar-Mode Transistors on a Voltage-Controlled Scheme", IEEE,Transactions on electron devices, ED-28(7) (1981)
- J.Wang, "A New Static Indcution Thyristor(SITh)Analytical Model", IEEE Trans.on power Electronics, 14(5) (1999)
- H.Tadano, "Low Loss Static Induction Devices(Transistors and Thyristors)", Microelectron.Reliab., 37(9), pp.1389~1396 (1997)
- R. Signh, "Cryogenic Operation of Static Induction (SIT", SITh) devices, 1995, ~