고 내압 전력 소자 설계를 위한 필드 링 최적화에 관한 연구
Optimal Design of Field Ring for Power Devices
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초록
In this paper, we proposed trench field ring for breakdown voltage of power devices. The proposed trench field ring was improved 10% efficiency comparing with conventional field ring. we analyzed five parameters of trench field ring for design of trench field ring and carried out 2-D devices simulation and process simulations. That is, we analyzed number of field ring, juction depth, distance of field rings, trench width, doping profield. The proposed trench field ring was better to more 1000V.
Abstract
In this paper, we proposed trench field ring for breakdown voltage of power devices. The proposed trench field ring was improved 10% efficiency comparing with conventional field ring. we analyzed five parameters of trench field ring for design of trench field ring and carried out 2-D devices simulation and process simulations. That is, we analyzed number of field ring, juction depth, distance of field rings, trench width, doping profield. The proposed trench field ring was better to more 1000V.
참고문헌 (6)
- E. G. Kang, "A novel lateral trench electrode IGBT for super electrical characteristics", J. KIEEME, 9(15), pp.758~ (2002)
- K.Sheng, "Improved understand- switched thyristors", Proceedings of the ISPSD, pp.48~ (1994)
- S. Sridhar, "The dual gate emitter switched thyristor", IEEE EDL, (17), pp.25~ (1996)
- N.Iwamuro, "Forward biased safe operating area of emitter switched thyristor", IEEE Trans. ED, 42, pp.334~ (1995)
- N. Thapar, "An experimental evluation of the on-state performance of trench IGBT designs", SSE, 45(5), pp.771~ (1998)
- F. Udera, "1.2kV trench insulated gate bipolar transistors with ultra low on resistance", IEEE Trans. EDL, 20(8), pp.428~ (1999)