논문KCI 등재
Impact of gate protection silicon nitride film on the sub-quarter micron transistor performances
2
조회
0
다운로드
0
인용
0
참고문헌
주제분류재료공학
초록
Abstract
Gate protection SiNx as an alternative to a conventional re-oxidation proces in Dynamic Random AcesMemory devices is investigated. This process can not only protect the gate electrode tungsten against oxidation, but alsosave the thermal budget due to the re-oxidation. The protection SiNx process is applied to the poly-Si gate, and its deviceperformance is measured and compared with the re-oxidation processed poly-Si gate. The results on the gate dielectricintegrity show that etch damage-curing capability of protection SiNx is comparable to the re-oxidation process. In addition,the hot carrier immunity of the SiNx deposited gate is superior to that of re-oxidation procesed gate.
참고문헌 (4)
- "ungsten gate technology for quarter-micron applica-tion Jpn.", 35, pp.807~ (1996)
- "In-situ barrier formation for high reliable W", barier, pp.1998[DOI]
- "A fuly working 0.14mm DRAM technology with polymetal(W", WNx, pp.2000[DOI]
- "he halo nMOSFET characteristics dependent on the gate profile Proc.", pp.484~ (1999)
관련 논문AI추천
Reliability of multiple oxides integrated with thin HfSiOx gate dielectric on thick SiO2 layers잭리, 강창용, 리노최, 이병훈, 이태호한국마이크로전자및패키징학회 · 마이크로전자 및 패키징학회지2008 · 제15권 제4호A study of the dielectric constant of low-k SiOC filmTeresa Oh청정에너지연구소 · Journal of Ceramic Processing Research2010 · 제11권 제6호The impact of lanthanum hafnium oxide as a gate insulator on the performance of zinc oxide thin film transistors박종완청정에너지연구소 · Journal of Ceramic Processing Research2010 · 제11권 제6호High performance of ZnO thin film transistors using SiNx and organic PVP gate dielectrics김영배, 김영웅, 박인성, 최덕균한국결정성장학회 · 한국결정성장학회지2007 · 제17권 제5호Characteristic of Zr(Si)N film as a diffusion barrier between Cu metal and Si substrateByungchulCho, HeonchangKim, JwayeonKim, KyeongsoonPark, SanghoonChai한국결정성장학회 · 한국결정성장학회지2002 · 제12권 제6호Effect of nano-scale strained Si layer grown on SiGe-on-insulator structure on MOSFET drain current improvement박재근, 심태헌, 이곤섭청정에너지연구소 · Journal of Ceramic Processing Research2004 · 제5권 제3호
이 간행물의 다른 논문 (7건)
Adsorption properties and metal growth aspects on the surface of activated carbon monolith electrochemically deposited woth Ag오원춘, 임창성pp. 37-46Growth and characterization of lead bromide: application to mercurous bromide김극태pp. 50-57Effect of anisotropic diffusion coefficient on the evolution of the interface void in copper metallization for integrated circuits최준호pp. 58-62Cobalt dodecanesulfate의 구조 변화권석순, 허영덕, 김지현pp. 63-67국부용융성장법으로 제조된 Sm이 첨가된 YBCO 초전도체의 용융온도 및 성장 속도에 따른 미세구조김소정pp. 68-72