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High performance of ZnO thin film transistors using SiNx and organic PVP gate dielectrics

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주제분류재료공학

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Abstract

The device performance of ZnO-thin film transistors (ZnO-TFTs) with gate dielectrics of SiO2, SiNx and Polyvinylphenol (PVP) having a bottom gate configuration were investigated. ZnO-TFTs can induce high device performance with low intrinsic carrier concentration of ZnO only by controlling gas flow rates without additional doping or annealing processes. The field effect mobility and on/off ratio of ZnO-TFTs with SiNx were 20.2 cm 2 V.1 s.1 and 5 × 10 6 , respectively, which is higher than those previously reported. The device adoptable values of the mobility of 1.37 cm 2 V.1 s.1 and the on/ off ratio of 6 × 10 3 were evaluated from the device with organic PVP dielectric.

참고문헌 (15)

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