Reliability of multiple oxides integrated with thin HfSiOx gate dielectric on thick SiO2 layers
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Reliability and performance in metal gate/high-k device with multiple gate dielectrics were investigated. MOSFETs with a thin HfSiOx layer on a thermal SiO2 dielectric as gate dielectrics exhibit excellent mobility and low interface trap density. However, the distribution of threshold voltages of HfSiOx/SiO2 stack devices were wider than those of SiO2 and HfSiOx single layer devices due to the penetration of Hf and/or intermixing of HfSiOx with underlying SiO2. The results of TZDB and SILC characteristics suggested that a certain portion of HfSiOx layer reacted with the underlying thick SiO2 layer, which in turn affected the reliability characteristics.
Abstract
Reliability and performance in metal gate/high-k device with multiple gate dielectrics were investigated. MOSFETs with a thin HfSiOx layer on a thermal SiO2 dielectric as gate dielectrics exhibit excellent mobility and low interface trap density. However, the distribution of threshold voltages of HfSiOx/SiO2 stack devices were wider than those of SiO2 and HfSiOx single layer devices due to the penetration of Hf and/or intermixing of HfSiOx with underlying SiO2. The results of TZDB and SILC characteristics suggested that a certain portion of HfSiOx layer reacted with the underlying thick SiO2 layer, which in turn affected the reliability characteristics.
참고문헌 (12)
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