PECVD에 의한 비정질 불화탄소막의 증착 및 특성 분석
Deposition and Analysis of Fluorinated Amorphous Carbon Thin Films by PECVD
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Abstract
The fluorinated amorphous carbon thin films (a-C:F) were deposited by PECVD(plasma enhanced chemical vapordeposition). The precursors were C4F8 which had a similar ratio of target film's carbon to fluorine ratio, and Si2H6/Hefor capturing excessive fluorine ion. We varied deposition condition of temperature and working pressure to survey theeffect of each changes. We measured dielectric constant, composition, and etc. At low temperature the film adhesion tosubstrate was very poor although the growth rate was very high, the growth rate was very low at high temperature. TheEDS(energy dispersive spectroscopy) result showed carbon and fluorine peak for films and Si peak for substrate. Therewas no oxygen peak.
참고문헌 (5)
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