열적 안정한 압력센서 제작을 위한 보론(B) 이온 주입 n형 Si 에피 전극 연구
A Study of B-implanted n Type Si Epi Resistor for the Fabrication of Thermal Stable Pressure Sensor
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In this paper, we focus on optimization of a boron (11B)-implanted n type Si epi substrate for obtaining near-zero temperature coef- ficient of resistance (TCR) at temperature range from 25 to 125 °C. The 11B-implantation on the N type-Si epi substrate formed isolation from the rest of the N-type Si by the depletion region of a PN junction. The TCR increased as the temperature of rapid thermal anneal (RTA) was increased at the temperature range from 900 °C to 1000°C for the p+ contact with implantation at dose of 1E16/cm2, but sheet resistance of this film was decreased. After the optimization of anneal process condition, the TCR of 1126.7±30.3 (ppm/K) was obtained for the p- resistor-COB package chips contained p+ contact with the implantation of 5E14/cm2. This shows the potential of the 11B-implanted n type Si epi substrate as a resistor for pressure sensor in thermal stable environment applications..
Abstract
In this paper, we focus on optimization of a boron (11B)-implanted n type Si epi substrate for obtaining near-zero temperature coef- ficient of resistance (TCR) at temperature range from 25 to 125 °C. The 11B-implantation on the N type-Si epi substrate formed isolation from the rest of the N-type Si by the depletion region of a PN junction. The TCR increased as the temperature of rapid thermal anneal (RTA) was increased at the temperature range from 900 °C to 1000°C for the p+ contact with implantation at dose of 1E16/cm2, but sheet resistance of this film was decreased. After the optimization of anneal process condition, the TCR of 1126.7±30.3 (ppm/K) was obtained for the p- resistor-COB package chips contained p+ contact with the implantation of 5E14/cm2. This shows the potential of the 11B-implanted n type Si epi substrate as a resistor for pressure sensor in thermal stable environment applications..
참고문헌 (10)
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