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Resistor-Based Temperature Sensors: A Technical Review

이용태|최우준|채영철
반도체설계교육센터 (IC DESIGN EDUCATION CENTER)|2021.01|IDEC Journal of Integrated Circuits and Systems|제7권 제1호|pp. 25-30|DOI 10.23075/jicas.2021.7.1.005

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참고문헌

키워드

Energy-efficiencyHigh resolutionCMOS temperature sensorResistor-based temperature sensorSilicided polysilicon resistors.

초록

This paper presents a technical overview of recently developed resistor-based temperature sensors, which achieve high energy-efficiency and high resolution, simultaneously. Such sensors consist of silicided polysilicon resistors that have relatively high temperature coefficients (TCs), low 1/f noise, low supply dependency, and low stress sensitivity. Various design techniques of resistor-based sensors are compared and their performances are summarized.

Abstract

This paper presents a technical overview of recently developed resistor-based temperature sensors, which achieve high energy-efficiency and high resolution, simultaneously. Such sensors consist of silicided polysilicon resistors that have relatively high temperature coefficients (TCs), low 1/f noise, low supply dependency, and low stress sensitivity. Various design techniques of resistor-based sensors are compared and their performances are summarized.

참고문헌 (16)

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  2. Y. Kim, "A 0.02mm2embedded temperature sensor with ±2°C inaccuracy for self-refresh control in 25nm mobile DRAM", Proc. ESSCIRC, pp.267~270 (2015)
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  5. S. Pan, "A 0. 25mm2 ResistorBased Temperature Sensor with an Inaccuracy of 0. 12°C(3σ)from-55°C to 125°C and a Resolution FOM of 32fJ∙K2", IEEE J. Solid-State Circuits, 53(12), pp.3347~3355 (2018)
  6. S. Pan, "A 10 fJ·K2 Wheatstone Bridge Temperature Sensor With a Tail-ResistorLinearized OTA", IEEE J. Solid-State Circuits, Early Access (2020)
  7. H. Park, "A 0. 8-V Resistor-Based Temperature Sensor in 65-nm CMOS With Supply Sensitivity of 0. 28 °C", V, 2018, pp.53(3), 906~912
  8. H. Xin, "A 174 pW–488. 3 nW 1 S", s–100 kS, Resolution, pp.Resistance Adaptability, IEEE SolidState Circuits Lett.[DOI]
  9. S. Pan, "A Wheatstone Bridge Temperature Sensor with a Resolution FoM of 20fJ·K2", IEEE Int. Solid-State Circuits Conf. (ISSCC) Dig. Tech. Papers, pp.186~188 (2019)
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  11. J. Angevare, "A 6800-μm2resistor-based temperature sensor in 180-nm CMOS", IEEE J. Solid-State Circuits, 54(10), pp.2649~2657 (2019)
  12. A. Mordakhay, "Miniaturized, 0. 01 mm2, Resistor-based Thermal Sensor with an Energy Consumption of 0. 9 nJ and a Conversion Time of 80 μs for Processor Applications", IEEE J. Solid-State Circuits, 53(10), pp.2958~2969 (2018)
  13. A. Khashaba, "A 0.0088mm2 Resistor-Based Temperature Sensor Achieving 92fJ·K2 FoM in 65nm CMOS", IEEE Int. Solid-State Circuits Conf. (ISSCC) Dig. Tech. Papers,, pp.60~61 (2020)
  14. W. Choi, "A Compact Resistor-Based CMOS Temperature Sensor With an Inaccuracy of 0. 12 °C(3σ)and a Resolution FoM of 0. 43 pJ∙K2in 65-nm CMOS", IEEE J. Solid-State Circuits, 53(12), pp.3356~3367 (2018)
  15. Y. Lee, "A 5800μm2resistor-based temperature sensor with a one-point trimmed inaccuracy of ±1. 2 °C(3σ)From −50 °C to 105 °C in 65-nm CMOS", IEEE Solid-State Circuits Lett., 2(9), pp.67~70 (2019)
  16. "Smart Temperature Sensor Survey"[URL]

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