High Temperature Durability Amorphous ITO:Yb Films Deposited by Magnetron Co-Sputtering
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Yb-doped ITO (ITO:Yb) films were deposited on unheated non-alkali glass substrates by magnetron cosputtering using two cathodes (DC, RF) equipped with the ITO and Yb2O3 target, respectively. The composition of the ITO:Yb films was controlled by adjusting the RF powers from 0 W to 480 W in 120 W steps with the DC power fixed at 70 W. The ITO:Yb films had a higher crystallization temperature (200ºC) than that of the ITO films (170oC), which was attributed to both larger ionic radius of Yb3+ and higher bond enthalpy of Yb2O3, compared to ITO. This amorphous ITO:Yb film post-annealed at 170oC showed a resistivity of 5.52 × 10−4 Ωcm, indicating that a introduction of Yb increased resistivity of the ITO film. However, these amorphous ITO:Yb films showed a high etching rate, fine pattering property, and a very smooth surface morphology above the crystallization temperature of the amorphous ITO films (about 170ºC). The transmittance of all films was >80% in the visible region.
Abstract
Yb-doped ITO (ITO:Yb) films were deposited on unheated non-alkali glass substrates by magnetron cosputtering using two cathodes (DC, RF) equipped with the ITO and Yb2O3 target, respectively. The composition of the ITO:Yb films was controlled by adjusting the RF powers from 0 W to 480 W in 120 W steps with the DC power fixed at 70 W. The ITO:Yb films had a higher crystallization temperature (200ºC) than that of the ITO films (170oC), which was attributed to both larger ionic radius of Yb3+ and higher bond enthalpy of Yb2O3, compared to ITO. This amorphous ITO:Yb film post-annealed at 170oC showed a resistivity of 5.52 × 10−4 Ωcm, indicating that a introduction of Yb increased resistivity of the ITO film. However, these amorphous ITO:Yb films showed a high etching rate, fine pattering property, and a very smooth surface morphology above the crystallization temperature of the amorphous ITO films (about 170ºC). The transmittance of all films was >80% in the visible region.
참고문헌 (13)
- 김규호, "R.F Sputtering 법으로 증착한 ITO 박막의 미세구조와 전기.광학적 특성", 한국표면공학회지, 38(4), pp.150~155 (2005), 한국표면공학회
- Z. C. Jin, , Thin Solid Films, 64, pp.381~ (1988)
- P. K. Song, , Jpn. J. Appl. Phys., 37, pp.1870~ (1998)
- J. E. A. van den Meerakker, , Thin Solid Films, 266, pp.152~ (1995)
- E. Nishimura, , Jpn. J. Appl. Phys., 35, pp.2788~ (1996)
- D. C. Paine, , Jpn. J. Appl. Phy., 85, pp.8445~ (1999)
- P. K. Song, , Jpn. J. Appl. Phys., 38, pp.5224~ (1999)
- Se-Il Kim, "Preparation and Characterization of Cerium-Doped ITO Films Deposited by DC Magnetron Sputtering", Journal of the Korean Physical Society, 54(3), pp.1297~1301 (2009), 한국물리학회
- Y. M. Kang, , Thin Solid Films, 518, pp.3081~ (2010)
- D. Y. Lee, , Surf. Coat. Technol., 202, pp.5718~ (2008)
- Taek Sung Kim, "Influence of Substrate Temperature and O2 Flow on the Properties of RF-Magnetron-Sputtered Indium-Tin-Oxide Thin Films", Journal of the Korean Physical Society, 51(2I), pp.534~538 (2007), 한국물리학회
- C. Guillen, , Vacuum, 80, pp.615~ (2006)
- Y. Shigesato, , Appl. Phys. Lett., 62, pp.1268~ (1993)