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3D 패키징을 위한 Scallop-free TSV와 Cu Pillar 및 하이브리드 본딩

Scallop-free TSV, Copper Pillar and Hybrid Bonding for 3D Packaging

정재필|장예진
한국마이크로전자및패키징학회 (The Microelectronics And Packaging Society)|2022.12|마이크로전자 및 패키징학회지 (Jornal of the Microelectronics and Packaging Society)|제29권 제4호|pp. 1-8|DOI 10.6117/kmeps.2022.29.4.001

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참고문헌

키워드

Three dimensional packagingThrough-Si-Via (TSV)Scallop-freeCu bonding
주제분류재료공학

초록

TSV 기술을 포함한 고밀도, 고집적 패키징 기술은 IoT, 6G/5G 통신, HPC (high-performance computing)등여러 분야에서 중요한 기술로 여겨지고 있다. 2차원에서 고집적화를 달성하는 것은 물리적 한계에 도달하게 되었으며, 따라서 3D 패키징 기술을 위하여 다양한 연구들이 진행되고 있다. 본 고에서는 scallop의 형성 원인과 영향, 매끈한 측벽을만들기 위한 scallop-free 에칭 기술, TSV 표면의 Cu bonding에 대해서 자세히 조사하였다. 이러한 기술들은 고품질 TSV 형성 및 3D 패키징 기술에 영향을 줄 것으로 예상한다.

Abstract

High-density packaging technologies, including Through-Si-Via (TSV) technologies, are considered important in many fields such as IoT (internet of things), 6G/5G (generation) communication, and high-performance computing (HPC). Achieving high integration in two dimensional packaging has confronted with physical limitations, and hence various studies have been performed for the three-dimensional (3D) packaging technologies. In this review, we described about the causes and effects of scallop formation in TSV, the scallop-free etching technique for creating smooth sidewalls, Cu pillar and Cu-SiO2 hybrid bonding in TSV. These technologies are expected to have effects on the formation of highquality TSVs and the development of 3D packaging technologies.

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