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Effect of anisotropic diffusion coefficient on the evolution of the interface void in copper metallization for integrated circuits

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주제분류재료공학

초록

Abstract

The shape evolution of the interface void of copper metalization for intergrated circuits under electromigrationstres is modeled. A 2-dimensional finite-diference numerical method is employed for computing time evolution of thevoid shape driven by surface difusion, and the electrostatic problem is solved by boundary element method. When thedifusion coefficient is isotropic, the numerical results agree wel with the known case of wedge-shape void evolution. Thenumerical results for the anisotropic difusion coefficient show that the initialy circular void evolves to become a fatal slit-like shape when the electron wind force is large, while the shape becomes non-fatal and circular as the electron wind forcedecreases. The results indicate that the open circuit failure caused by slit-like void shape is far less probable to be observedfor copper metalization under a normal electromigration stress condition.

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