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Experimental Investigation on the Degradation of SiGe LNAs Under Different Bias Conditions Induced by 3MeV Proton Irradiation

Jun Zhang|Zhuoqi Li|Shuhuan Liu|Xiaotang Ren|Mathew Adefusika Adekoya|Shuangying Liu
한국원자력학회 (Korean Nuclear Society)|2022.02|Nuclear Engineering and Technology|제54권 제2호|pp. 661-665|DOI https://doi.org/10.1016/j.net.2021.08.009

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키워드

Noise figureProton irradiation damageSiGe Low noise amplifierProton irradiation S parameters
주제분류원자력공학

초록

The 3 MeV proton irradiation effects on SiGe low noise amplifier (LNA) (NXP BGU7005) performanceunder different voltage supply VCC (0 V, 2.5 V) conditions were firstly experimental studied in thispresent work. The S parameters including S11, S22, S21, 1 dB compression point and noise figure (NF) of thetest samples under different bias voltage supply were measured and compared before and after 3 MeVproton irradiation. The total proton irradiation fluence was 1 1015 protons/cm2. The maximumdegradation quantities of the gain S21 and NF of the test samples under zero bias are measuredrespectively 1.6 dB and 1.2 dB. Compared with the samples under 2.5 V bias supply, the maximumdegradation of S21 and NF are respectively 1.1 dB and 0.8 dB in the whole frequency band. It is noteworthy that the gain and NF of SiGe LNAs under zero-bias mode suffer enhanced degradation comparedwith those under normal bias supply. The key influence factors are discussed based on the correlation ofthe SiGe device and the LNA circuit. Different process of the ionization damage and displacement damageunder zero-bias and 2.5 V bias voltage supply contributed to the degradation difference. The underlyingphysical mechanisms are analyzed and investigated

Abstract

The 3 MeV proton irradiation effects on SiGe low noise amplifier (LNA) (NXP BGU7005) performanceunder different voltage supply VCC (0 V, 2.5 V) conditions were firstly experimental studied in thispresent work. The S parameters including S11, S22, S21, 1 dB compression point and noise figure (NF) of thetest samples under different bias voltage supply were measured and compared before and after 3 MeVproton irradiation. The total proton irradiation fluence was 1 1015 protons/cm2. The maximumdegradation quantities of the gain S21 and NF of the test samples under zero bias are measuredrespectively 1.6 dB and 1.2 dB. Compared with the samples under 2.5 V bias supply, the maximumdegradation of S21 and NF are respectively 1.1 dB and 0.8 dB in the whole frequency band. It is noteworthy that the gain and NF of SiGe LNAs under zero-bias mode suffer enhanced degradation comparedwith those under normal bias supply. The key influence factors are discussed based on the correlation ofthe SiGe device and the LNA circuit. Different process of the ionization damage and displacement damageunder zero-bias and 2.5 V bias voltage supply contributed to the degradation difference. The underlyingphysical mechanisms are analyzed and investigated

참고문헌 (36)

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