산화물 박막트랜지스터의 연구동향 및 디스플레이 응용
Recent Progress on Oxide Thin Film Transistors and their Application for Display
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초록
산화물이 반도체 특성을 지니는 것으로 보고된 이후, 다결정을 지니는 ZnO와 비정질 구조를 지니는 InGaZnO와 ZnSnO 등을 중심으로 연구가 활발히 진행되고 있다. 산화물 TFT는 구조에 따라 각기 다른 장점 및 단점을 지니기 때문에, 사용하고자 하는 목적에 따라 적합한 구조를 지니는 소자를 개발하는 것이 중요하다. 그리고 산화물 트랜지스터는 제조공정 진행 중의 가스 분위기, 노출된 플라즈마로부터의 Damage에 따라 특성의 변화가 매우 심하므로, 적절한 특성 확보를 위해서는 후속 열처리 등을 통하여 특성 변화를 최소화하는 것이 매우 중요하다. 이러한 공정조건 및 구조의 최적화를 통하여, 1 ~ 100 cm2/V•s 정도의 높은 이동도와 대면적에서 균일성을 지니는 산화물 TFT를 제조할 수 있다. 따라서 산화물 반도체는 향후 액정 디스플레이, 전자종이, 유기발광 디스플레이, 투명 디스플레이 및 플렉시블 디스플레이의 기판으로 적용 가능성이 매우 높다고 판단된다.
Abstract
Polycrystalline ZnO and amorphous InGaZnO/ZnSnO have attracted much attention as high-performance channel materials for thin-film transistors (TFTs). Because oxide TFTs have different advantages and disadvantages in respect to their TFT structures, we should consider the target application and develop the oxide TFT devices. Moreover, during fabrication process of oxide TFTs, the post annealing is inevitable process in order to minimize the variation of TFT characteristics because the characteristics of oxide TFTs could be easily changed by the process gas atmosphere and the plasma damage. By the process optimization, the high mobility ranging from 1 to 100 cm2/V•s and the good uniformity in large area could be achieved. Therefore, it could be suggested that oxide TFTs have high potential for the backplanes of liquid crystal display, electronic paper, organic light emitting diode display, transparent display and flexible display.
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