Channel과 gate 구조에 따른 산화물박막트랜지스터의 전기적 특성 연구
Effect of Channel and Gate Structures on Electrical Characteristics of Oxide Thin-Film Transistors
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초록
본 연구에서는 새로운 구조의 dual gate tri-layer split channel 박막트랜지스터를 제작하였다. 전류 구동 능력을 향상시키기위해 액티브 층의 양쪽에 게이트를 형성하였고 전하이동도를 증가시키기 위하여 액티브 층에서 채널이 형성되는 구간인 첫번째 층과 세번째 층에 전도성이 높은 ITO 층을 배치하였다. 추가적으로 분할 채널을 이용하여 채널의 series 저항을 낮추면서 분할한 채널의 측면에서도 accumulation을 유도하여 전하이동도를 향상시켰다. 기존의 single gate a-ITGZO 박막트랜지스터가 15cm2/Vs의 전하이동도를 가지는 반면 dual gate tri-layer split channel 박막트랜지스터는 134 cm2/Vs의 높은 전하이동도를 가졌다.
Abstract
In this study, we designed oxide thin-film transistors (TFTs) with dual gate and tri layered split channels, andinvestigated the structural effect of the TFTs on the electrical characteristics. The dual gates played a key role inincreasing the driving current, and the channel structure of tri layers and split form contributed to the increase inthe carrier mobility. The tri layered channels consisting of the a-ITGZO and two ITO layers inserted between thegate dielectric and a-ITGZO led to the increase in the on-current by using ITO layers with high conductivity, andthe split channels lowered series resistance of the channels. Compared with the mobility (15 cm2/V·s) of the singlegate a-ITGZO TFT, the mobility (134 cm2/V·s) of the dual gate tri-layer split channel TFT was remarkably enhancedby the structural effect.
참고문헌 (12)
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